NILMS4501N
Power MOSFET with Current Mirror FET
24 V, 9.5 A, N−Channel, ESD Protected, 1:250 Current Mirror, SO−8 Leadl...
NILMS4501N
Power
MOSFET with Current Mirror FET
24 V, 9.5 A, N−Channel, ESD Protected, 1:250 Current Mirror, SO−8 Leadless
N−Channel
MOSFET with 1:250 current mirror device utilizing the latest ON Semiconductor technology to achieve low figure of merit while keeping a high accuracy in the linear region. This device takes advantage of the latest leadless QFN package to improve thermal transfer.
Features
Current Sense
MOSFET "15% Current Mirror Accuracy ESD Protected on the Main and the Mirror
MOSFET Low Gate Charge Pb−Free Package is Available*
Applications
DC−DC Converters
Voltage Regulator Modules Small DC Motor Controls
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 4
http://onsemi.com
VDSS 24 V
RDS(on) Typ 12 mW @ 4.5 V
ID MAX 9.5 A
N−Channel with Current
Mirror FET
Drain
Gate
Main
Sense
Source
MARKING DIAGRAM
PLLP4 CASE 508AA
4501N AYWW
G
4501N = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
PIN CONNECTIONS Sense (1)
Drain (4)
Source (2)
Gate (3)
(Bottom View)
ORDERING INFORMATION
Device NILMS4501NR2
Package
Shipping†
PLLP4 2500/Tape & Reel
NILMS4501NR2G PLLP4 2500/Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to ...
