www.DataSheet4U.com
NID5001N
Preferred Device
Self−protected FET with Temperature and Current Limit
HDPlus devices are...
www.DataSheet4U.com
NID5001N
Preferred Device
Self−protected FET with Temperature and Current Limit
HDPlus devices are an advanced series of power
MOSFETs which utilize ON Semicondutor’s latest
MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected
voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp.
Features http://onsemi.com
VDSS (Clamped) 42 V ID MAX (Limited) 33 A*
RDS(ON) TYP 23 mΩ @ 10 V
Drain Over
voltage Protection MPWR
Low RDS(on) Current Limitation Thermal Shutdown with Automatic Restart Short Circuit Protection IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Over
voltage Clamped Protection
Gate Input
RG
ESD Protection Temperature Limit Current Limit Current Sense
Source
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain−to−Source
Voltage Internally Clamped Drain−to−Gate
Voltage Internally Clamped (RGS = 1.0 MW) Gate−to−Source
Voltage Drain Current Continuous Symbol VDSS VDGR VGS ID PD 64 1.0 1.56 RqJC RqJA RqJA EAS 1.95 120 80 1215 °C/W Value 42 42 "14 Unit Vdc Vdc...