NGTB15N60R2FG

NGTB15N60R2FG IGBT 600V, 14A, N-Channel www.onsemi.com Features  Reverse Conducting II IGBT  IGBT VCE(sat)=1.85V typ. (IC=15A, VGE=15V)  IGBT tf=75ns typ. Diode VF=1.7V typ. (IF=15A) Diode trr=95ns typ. 10s Short Circuit Capability Applications  General Purpose Inverter Electrical Connection N-Channel 2 1 1:Gate 2:Collector 3:Emitter 3 Specifications Absolute Maximum Ratings at Ta = 25C, Unless otherwise specified Parameter Collector to Emitter Voltage Gate to Emitter Voltage Collector Current (DC) Limited by Tjmax @Tc=25C *2 @Tc=100C *2 Collector Current (Peak) Pulse width Limited by Tjmax Diode Average Output Current Power Dissipation Tc=25C (Our ideal heat dissipation condition) *2 Junction Temperature Storage Temperature Symbol VCES VGES IC *1 ICP IO PD Tj Tstg Value 600 20 24 14 60 15 54 175 55 to +175 Unit V V A A A A W C C Note :  *1 Collector Current is calculated from the following formula. Tjmax...