NEZ5964-15DD

PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated band. To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) structure. NEC’s strigent quality assurance and test procedures guarantee the highest reliability and performance. PACKAGE DIMENSIONS (unit: mm) 0.5 ±0.1 2.5 MIN. C1.0 4PLACES R1.2 4PLACES SOURCE GATE 2.4 5.6 17.4 ±0.2 8.0 ±0.1 DRAIN 20.4 ±0.2 2.5 MIN. SELECTION CHART NEZ PART NUMBER NEZ3642-15D, 15DD NEZ4450-15D, 15DD NEZ5964-15D, 15DD NEZ6472-15D, 15DD NEZ7785-15D FREQUENCY BAND (GHz) 3.6 to 4.2 4.4 to 5.0 20.4 ±0.3 16.0 5.0 MAX. 0.1–0.05 2.4 ±0.2 1.6 5.9 to 6.45 6.4 to 7.2 7.7 to 8.5 +0.1 0.2 MAX. 16.0 FEATURES Internally matched to 50 Ω High power output High linear gain High reliability Low distortion Document No. P10982EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 15 W C-BAND Po GaAs FET NEZ SERIES NEZ-15D/15DD ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperatur...