NEZ3642-4D

PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated band. To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) structure. NEC’s strigent quality assurance and test procedures guarantee the highest reliability and performance. PACKAGE DIMENSIONS (unit: mm) 0.5±0.1 2.5MIN. C1.5 4PLACES SOURCE R1.6 2PLACES GATE 2.4 12.9±0.2 3.2 6.45±0.05 DRAIN 17.0±0.2 21.0±0.3 10.7 2.5MIN. SELECTION CHART NEZ PART NUMBER NEZ3642-4D, 8D, 8DD NEZ4450-4D, 4DD/8D, 8DD NEZ5964-4D, 4DD/8D, 8DD NEZ6472-4D, 4DD/8D, 8DD NEZ7177-4D, 4DD/8D, 8DD NEZ7785-4D, 4DD/8D, 8DD FREQUENCY BAND (GHz) 3.6 to 4.2 +0.1 0.1–0.05 5.0MAX. 0.2MAX. 2.6±0.2 1.6 4.4 to 5.0 5.9 to 6.45 6.4 to 7.2 7.1 to 7.7 7.7 to 8.5 12.0 FEATURES Internally matched to 50 Ω High power output High linear gain High reliability Low distortion Document No. P10981EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 4W/8W C-BAND POWER-GaAs FET NEZ Series ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) RATINGS NEZ-4D, 4DD Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Gate Current Total Po...