NESG270034

www.DataSheet4U.com NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V 3-pin power minimold (34 PKG) ORDERING INFORMATION Part Number NESG270034 Order Number NESG270034-AZ Package 3-pin power minimold (34 PKG) (Pb-Free) 2 Note1, Quantity 25 pcs (Non reel) Magazine case Supplying Form NESG270034-T1 NESG270034-T1-AZ 1 kpcs/reel 12 mm wide embossed taping Pin 2 (Emitter) face the perforation side of the tape Notes 1. Contains Lead in the part except the electrode terminals. 2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature 2 Symbol VCBO VCEO VEBO IC Ptot Note Ratings 25 9.2 2.8 750 1.9 150 −65 to +150 Unit V V V mA W °C °C Tj Tstg Note Mounted on 34.2 cm × 0.8 mm (t) glass epoxy PWB Caution Obser...