NESG2101M05

NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance M05 DESCRIPTION NEC's NESG2101M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators NEC s low profile, flat lead style M05 Package provides high frequency performance for compact wireless designs. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB GL NF Ga RF NF Ga MSG |S21E| fT Cre ICBO DC IEBO hFE Notes: 2 NESG2101M05 M05 UNITS dBm dB dB dB dB dB dB dB GHz pF nA nA 130 190 14.5 11.5 14 11.0 MIN TYP 21 15 0.9 13.0 0.6 19.0 17.0 13.5 17 0.4 0.5 100 100 260 1.2 MAX PARAMETERS AND CONDITIONS Output Power at 1 dB Compression Point VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz Linear Gain, VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz Noise Figure at VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT Associated Gain at VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT Noise Figure at VCE = 2 V, IC = 7mA, f = 1 GHz, ZS = ZSOPT, ZL = ZLOPT Associated Gain at VCE = 2 V, IC = 7 mA, f = 1 GHz, ZS = ZSOPT, ZL = ZLOPT Maximum Stable Ga...