NESG2021M16

PRELIMINARY DATA SHEET NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2021M16 FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz LOW PROFILE M16 PACKAGE: 6-pin lead-less minimold M16 DESCRIPTION NEC's NESG2021M16 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE NESG2021M16 M16 DC RF SYMBOLS NF Ga NF Ga MSG |S21E|2 P1dB OIP3 fT Cre ICBO IEBO hFE PARAMETERS AND CONDITIONS UNITS Noise Figure at VCE = 2 V, IC = 3 mA, f = 5.2 GHz, ZS = ZSOPT, ZL = ZLOPT dB Associated Gain at VCE = 2 V, IC = 3 mA, f = 5.2 GHz, ZS = ZSOPT, ZL = ZLOPT dB Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT dB ...