NES1821B-30

DATA SHEET PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz band. Internal input matching circuits are designed to optimize performance. The device has a 0.8 mm gate length for increased linear gain. To reduce thermal resistance, the device uses PHS (Plated Heat Sink) technology. The device incorporates WSi (tungsten silicide) gate for high reliability and SiO2 glassivation for R1.2 17.4±0.3 8.0 2.4 SOURCE PACKAGE DIMENSIONS (UNIT: mm) 24±0.3 20.4 1.0±0.1 GATE surface stability. FEATURES · · · · · DRAIN 0.1 2.4 0.2 MAX 4.5 MAX 1.8 High output power High gain High power added efficiency Internally matched input High reliability ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS VGD ID IG PT(*) Tch Tstg 15 –7 –18 27 180 110 175 –65 to +175 V V V A mA W °C °C *TC = 25 °C Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. Document No. P12094EJ1V0DS00 (1st edition) Date Published November 1996 N Printed in Japan © 1996 NES1821B-30 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Saturated Drain Current Pinch-off Voltage Thermal Resistance Output Power Linear Gain Drain Current SYMBOL IDSS V...