DATA SHEET
SILICON POWER TRANSISTOR
NEL200101-24
NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
DESCRIPTION ...
DATA SHEET
SILICON POWER TRANSISTOR
NEL200101-24
NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
DESCRIPTION AND APPLICATIONS
NEL2001012-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability.
OUTLINE DIMENSIONS (Unit: mm)
1.0 MIN. 1.0 MIN. 0.2 1.2 –0.1
+0.2
1.5 ±0.2 3
FEATURES
φ 7 ±0.3
High Linear Power and Gain Low Internal Modulation Distortion High Reliability Gold Metallization 24 V Operation
1.6 ±0.3
2 2 ±0.2
Emitter Ballasting
0.1 –0.04
+0.06
3.0 6.2 ±0.2
1 1 - EMITTER 2 - BASE 3 - COLLECTOR
ABSOLUTE MAXIMUM RATING (TA = 25 ˚C)
PARAMETER Collector to Base
Voltage Collector to Emitter
Voltage Emitter to Base
Voltage Collector to Emitter
Voltage Collector Current Power Dissipation Thermal Resistance Junction Temperature Storage Temperature SYMBOL VCBO VCER VEBO VCEO IC PT Rth(j-c) Tj Tstg R = 10 Ω SPECIFIED CONDITION
RATINGS 45 30 3 18 0.5 7.4 23.6 200 –65 to 150
10 ±0.3
UNIT V V V V A W ˚C/W ˚C ˚C
Document No. P11581EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan
©
1996
NEL200101-24
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER Collector to Emitter Cutoff Current Collector to Emitter
Voltage (Base to Emitter Registor = 10 Ω) Collector to Emitter
Voltage (Open Base) Collector to Base
Voltage (Open Emitter) Emitter to Base
Voltage (Open Collector) DC F...