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NE961R200

Part Number	NE961R200
Manufacturer	NEC
Description	0.2 W X / Ku-BAND POWER GaAs MES FET
Published	May 7, 2005
Datasheet	NE961R200 PDF File

Features

• High Output Power 
• High Linear Gain : Po (1 dB) = +25.0 dBm TYP.: 10.0 dB TYP.


• High Power Added Efficiency: 35 % TYP.@V DS = 9 V, IDset = 90 mA, f = 14.5 GHz

ORDERING INFORMATION
Part Number NE960R200 NE961R200 NE960R275 75 Package 00 (CHIP)...

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