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NE960R2 Datasheet

Part Number NE960R2
Manufacturers NEC
Logo NEC
Description 0.2 W X / Ku-BAND POWER GaAs MES FET
Datasheet NE960R2 DatasheetNE960R2 Datasheet (PDF)

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R200 and the NE960R200 are available i.

  NE960R2   NE960R2






Part Number NE960R575
Manufacturers NEC
Logo NEC
Description 0.5 W X / Ku-BAND POWER GaAs MES FET
Datasheet NE960R2 DatasheetNE960R575 Datasheet (PDF)

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R500 and the NE960R500 are available i.

  NE960R2   NE960R2







Part Number NE960R500
Manufacturers NEC
Logo NEC
Description 0.5 W X / Ku-BAND POWER GaAs MES FET
Datasheet NE960R2 DatasheetNE960R500 Datasheet (PDF)

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R500 and the NE960R500 are available i.

  NE960R2   NE960R2







Part Number NE960R5
Manufacturers NEC
Logo NEC
Description 0.5 W X / Ku-BAND POWER GaAs MES FET
Datasheet NE960R2 DatasheetNE960R5 Datasheet (PDF)

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R500 and the NE960R500 are available i.

  NE960R2   NE960R2







Part Number NE960R275
Manufacturers NEC
Logo NEC
Description 0.2 W X / Ku-BAND POWER GaAs MES FET
Datasheet NE960R2 DatasheetNE960R275 Datasheet (PDF)

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R200 and the NE960R200 are available i.

  NE960R2   NE960R2







Part Number NE960R200
Manufacturers NEC
Logo NEC
Description 0.2 W X / Ku-BAND POWER GaAs MES FET
Datasheet NE960R2 DatasheetNE960R200 Datasheet (PDF)

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R200 and the NE960R200 are available i.

  NE960R2   NE960R2







0.2 W X / Ku-BAND POWER GaAs MES FET

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R200 and the NE960R200 are available in chip form. The NE960R200 has a via hole source grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R275 is available in a hermetically sealed ceramic package. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. FEATURES • High Output Power • High Linear Gain : Po (1 dB) = +25.0 dBm TYP. : 10.0 dB TYP. • High Power Added Efficiency: 35 % TYP. @V DS = 9 V, IDset = 90 mA, f = 14.5 GHz ORDERING INFORMATION Part Number NE960R200 NE961R200 NE960R275 75 Package 00 (CHIP) Supplying Form ESD protective envelope Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE960R200, NE960R275, NE961R200) Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all .


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