NE850R599A

C-BAND MEDIUM POWER GaAs MESFET NE850R599A FEATURES HIGH OUTPUT POWER: 0.5 W HIGH LINEAR GAIN: 9.5 dB HIGH EFFICIENCY (PAE): 38% SUPERIOR INTERMODULATION DISTORTION INDUSTRY STANDARD PACKAGING OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 99 5.2±0.3 1.0±0.1 4.0 MIN BOTH LEADS Gate φ2.2±0.2 4.0±0.1 Source 4.3±0.2 DESCRIPTION The NE850R599A is a medium power GaAs MESFET designed for up to a 1/2W output stage or as a driver for higher power devices. The device has no internal matching and can be used at frequencies from UHF to 8.5 GHZ. Equivalent performance in a chip package can be obtained by using only 1 cell of the NE8500100 chip. The chips used in this series offer superior reliability and consistent performance for which NEC microwave semiconductors are known. Drain 0.6±0.1 5.2±0.3 11.0±0.15 15.0±0.3 +.06 0.1 -.02 0.2 MAX 1.7±0.15 5.0 MAX 6.0±0.2 1.2 RECOMMENDED OPERATING LIMITS SYMBOLS VDS TCH GCOMP RG PARAMETERS Drain to Source Voltage Channel Temperature Gain Compression Gate Resistance UNITS MIN V °C dB KΩ 9 TYP MAX 10 130 3.0 1 ELECTRICAL CHARACTERISTICS (TC PART NUMBER PACKAGE OUTLINE SYMBOLS CHARACTERISTICS Power Out at Fixed Input Power Power Added Efficiency Drain Source Current Gate to Source Current Linear Gain Saturated Drain Current Pinch-off Voltage Transconductance Thermal Resistance (channel to case) = 25°C) NE850R599A 99 UNITS dBm % A mA dB mA V mS °C/W 220 -3.0 150 60 -1.6 9.5 430 -1.0 MIN 25.5 TYP 26.5 38 140 1.6 PIN = 7 dBm2 VDS = ...