NE76084

DATA SHEET GaAs MES FET NE76084 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz Gate length: L g = 0.3 µ m Gate width : W g = 280 µ m L 1.78 ± 0.2 1 L 0.5 TYP. PACKAGE DIMENSIONS (Unit: mm) ORDERING INFORMATION PART NUMBER NE76084-SL NE76084-T1 SUPPLYING FORM STICK Tape & reel 1000 pcs./reel Tape & reel 5000 pcs./reel 1.78 ± 0.2 LEAD LENGTH L = 1.7 mm MIN. L = 1.0 ± 0.2 mm L = 1.0 ± 0.2 mm MARKING E E 2 L 3 4 L NE76084-T1A 0.5 TYP. ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature V DS V GS V GD ID P tot T ch T stg 5.0 –3.0 –5.0 IDSS 240 175 –65 to +175 V V mA mW °C °C 1. Source 2. Drain 3. Source 4. Gate ELECTRICAL CHARACTERISTICS (TA = 25 °C) PART NUMBER PACKAGE CODE CHARACTERISTIC Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure Associated Gain SYMBOL I GSO I DSS V GS(off) gm NF Ga 8.0 15 –0.5 30 30 –0.8 40 1.6 9.0 MIN. NE76084 84 TYP. MAX. 10 50 –3.0 70 1.8 8.0 15 –0.5 30 30 –0.8 40 1.8 9.0 MIN. NE76084-2.4 84 TYP. MAX. 10 50 –3.0 70 2.4 UNIT TEST CONDITIONS µA mA V mS dB dB V GS = –4 V V DS = 3 V, VGS = 0 V V DS = 3 V, I DS = 100 µ A V DS = 3 V, I DS = 10 mA V DS = 3 V, I DS = 10 mA f = 12 GHz Document No. P11843EJ2V0DS00 (2nd edition) (Previous No. T...