NE722S01

NEC's C TO X BAND N-CHANNEL GaAs MES FET NE722S01 FEATURES HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz GATE LENGTH: LG = 0.8 µm (recessed gate) GATE WIDTH: WG = 400 µm 2 OUTLINE DIMENSION (Units in mm) PACKAGE OUTLINE SO1 2.0 ± 0.2 1 2. 0 ± 0. 2 DESCRIPTION NEC's NE722S01 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band. The device features a 0.8 micron recessed gate, triple epitaxial technology and is fabricated using ion implantation for improved RF and DC performance and uniformity. This device's low phase noise and high fT makes it a excellent choice for oscillator applications on a digital LNB (Low Noise Block). The NE722S01 is housed in a low cost plastic package which is available in Tape and Reel. NEC's stringent quality assurance and test procedures ensure the highest reliability performance. 0.125 ± 0.05 P 3 0.65 TYP 1.9 ± 0.2 1.6 4 0.5 TYP 2.0±0.2 1. Source 2. Drain 3. Source 4. Gate 1.5 MAX 0.4 MAX 4.0 ± 0.2 APPLICATIONS C to X band low noise amplifiers C to X band oscillators ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS IGSO IDSS VGS gm GS P1dB NF Ga PARAMETERS AND CONDITIONS Gate to Source Leak Current, VGS = -5 V Saturated Drain Current, VDS = 3 V, VGS = 0 V Gate to Source Cutoff Voltage, VDS = 3 V, ID = 100 µA Transconductance, VD...