NE71300-L

DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION PART NUMBER NE71300-N NE71300-M NE71300-L NE71383B I DSS (mA) 20 to 50 50 to 80 80 to 120 20 to 120 83B PACKAGE CODE 00 (CHIP) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGSO VGDO ID Ptot Tch Tstg 5.0 ð5.0 ð6.0 IDSS 270 400 175 ð65 to +175 V V V mA mW mW °C °C [NE71383B] [NE71300] RECOMMENDED OPERATING CONDITION (TA = 25 °C) CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 3 10 MAX. 4 30 15 Unit V mA dBm Document No. P11691EJ2V0DS00 (2nd edition) Date Published February 1997 N Printed in Japan © 1996 NE713 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Gate to Source Leak Current Saturated Drain Current Gate to Source Cut off Voltage Transconductance Noise Figure Associated Gain Noise Figure Associated Gain Output Power at 1 dB Gain Compression Point Thermal Resistance Rth 190 450 °C/W °C/W NE71300 NE71383B SYMBOL IGSO IDSS VGS (off) gm NF Ga NF Ga Po (1 dB) 8.0 11.5 MIN. − 20 −0.5 20 TYP. 1.0 40 −1.1 50 0.6 14.0 1.6 9.5 14.5 1.8 MAX. 10 120 −3.5 − 0.7 UNIT TEST CONDITIONS VGS = −5 V VDS = 3 V, VGS = 0 V VD...