NE650103M

NEC'S 10 W L & S-BAND NE650103M POWER GaAs MESFET FEATURES LOW COST PLASTIC PACKAGE USABLE TO 2.7 GHz: PCS, W-CDMA, WLL, Satellite Uplink, BWA HIGH OUTPUT POWER: 40 dBm TYP HIGH POWER ADDED EFFICIENCY: 45 % TYP at 2.3 GHz LOW THERMAL RESISTANCE: 4.0° C/W LEAD-FREE 2-φ 3.3 ± 0.3 GATE 13.8 ± 0.35 4.2 ± 0.4 5.84 ± 0.2 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 3M 20.32 ± 0.15 14.27 ± 0.15 3.5 ± 0.2 DESCRIPTION NEC's NE650103M is a 10 W GaAs MESFET designed for PCS, W-CDMA, WLL transmitter applications. It is capable of delivering 10 Watts of output power with high linear gain, high efficiency and excellent linearity. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures DRAIN 8.54 ± 0.2 2.04 ± 0.3 0.15 ± 0.05 SOURCE ELECTRICAL CHARACTERISTICS (TC PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB GL CHARACTERISTICS Power Out at 1dB Gain Compression Linear Gain (at Pin ≤ 23 dBm) Power Added Efficiency Saturated Drain Current Pinch-Off Voltage Thermal Resistance = 25°C) NE650103M 3M UNITS dBm dB % A V °C/W 2.0 -4.0 MIN 39.0 10.0 TYP 40.0 11.0 45 5.0 -2.5 4.0 7.0 -1.0 4.5 VDS = 2.5 V; VGS = 0 V VDS = 2.5 V; IDS = 23 mA Channel to Case f = 2.3 GHz, VDS = 10.0 V Rg = 100 Ω IDSQ ≤ 1.5 A (RF OFF) MAX TEST CONDITIONS Functional Characteristics ηADD IDSS VP RTH Electrical DC Characteristics California Eastern Laboratories 1.8 ± 0.3 NE650103M ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C) SYMBOLS VDS VGD VGS IDS IGF PT TCH TSTG PARA...