NE58219

NEC's NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD FEATURES HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz LOW Cre: 0.9 pF TYP at VCB = 5 V, IE = 0, f = 1 MHz 0.2 +0.1 –0 NE58219 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 19 ULTRA SUPER MINI MOLD PACKAGE: 1.6 x 0.8 mm 1.6±0.1 0.8±0.1 2 1.6±0.1 1.0 0.5 DESCRIPTION NEC's NE58219 is a low supply voltage transistor designed for UHF Mixer and oscillator applications. The 3 pin ultra super mini mold package makes this device ideally suited for high density surface mount assembly. 0.5 1 0.75±0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO VCE(sat) hFE fT CRE |S21E|2 Notes: 1. Electronic Industrial Association of Japan 2. Pulsed measurement, pulse width ≤ 350 µs, Duty Cycle ≤ 2 %. 3. The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 15 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Collector Saturation Voltage at hFE = 10, IC = 5 mA DC Current Gain at VCE = 5 V, IC = 5 mA2 Gain Bandwidth at VCE = 5 V, IC = 5 mA Feedback Capacitance at VCB = 5 V, IE = 0, f = 1 MHz3 Insertion Power Gain at VCE = 5 V, IC = 5 mA, f = 1 GHz GHz pF dB 5.0 UNITS µA µA V 60 3.0 5.0 0.9 1.2 MIN NE58219 2SC5004 19 TYP MAX 0.1 0.1 0.5 120 California Eastern Laboratories...