4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER: 29.5 dBm TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm
• HIGH POWER ADDED EFFICIENCY: 55% TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm
• HIGH LINEAR GAIN: 14 dB TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 0 dBm
• SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX
• SINGLE SUPPLY: 3.0 to 6.0 V
OUTLINE DIMENSIONS (Units in mm)
Gate
PA.
OPERATION SILICON RF POWER MOSFET
4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER: 29.5 dBm TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm
• HIGH POWER ADDED EFFICIENCY: 55% TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm
• HIGH LINEAR GAIN: 14 dB TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 0 dBm
• SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX
• SINGLE SUPPLY: 3.0 to 6.0 V
OUTLINE DIMENSIONS (Units in mm)
Gate
PACKAGE OUTLINE 79A
4.2 Max
Source
Drain
Gate
1.5 ± 0.2
Source Drain
1.2 Max
0.8 ± 0.15 4.4 Max 1.0 Max
5.7 Max 0.6 ± 0.15
0.4 ± 0.15 5.7 Max
0.8 Max 3.6 ± 0.2
Bottom View
0.2 ± 0.1
0.9 ± 0.2
DESCRIPTION
The NE5500179A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 4.8 V GSM1800 and GSM1900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 29.5 dBm output power with 55% power added efficiency at 1.9 GHz under the 4.8 V supply voltage, or can deliver 27 dBm output power with 50% power added efficiency at 3.5 V by varying the gate voltage as a power control function.
APPLICATIONS
• DIGITAL CELLULAR PHONES • DIGITAL CORDLESS PHONES • OTHERS
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
CHARACTERISTICS
UNITS MIN
IGSS
Gate to Source Leakage Current
nA
-
IDSS
Drain to Source Leakag.