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NE434S01 Datasheet

Part Number NE434S01
Manufacturers NEC
Logo NEC
Description C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Datasheet NE434S01 DatasheetNE434S01 Datasheet (PDF)

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems. 1 2.0 ± 0.2 2. PACKAGE DIMENSIONS (Unit: mm) 0 ± FEATURES • • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP., Ga = 15.5 dB TYP. at f = 4 GHz.

  NE434S01   NE434S01






Part Number NE434S01-T1B
Manufacturers NEC
Logo NEC
Description C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Datasheet NE434S01 DatasheetNE434S01-T1B Datasheet (PDF)

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems. 1 2.0 ± 0.2 2. PACKAGE DIMENSIONS (Unit: mm) 0 ± FEATURES • • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP., Ga = 15.5 dB TYP. at f = 4 GHz.

  NE434S01   NE434S01







Part Number NE434S01-T1
Manufacturers NEC
Logo NEC
Description C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Datasheet NE434S01 DatasheetNE434S01-T1 Datasheet (PDF)

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems. 1 2.0 ± 0.2 2. PACKAGE DIMENSIONS (Unit: mm) 0 ± FEATURES • • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP., Ga = 15.5 dB TYP. at f = 4 GHz.

  NE434S01   NE434S01







C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems. 1 2.0 ± 0.2 2. PACKAGE DIMENSIONS (Unit: mm) 0 ± FEATURES • • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP., Ga = 15.5 dB TYP. at f = 4 GHz Gate Width: Wg = 280 Pm 0. 2 ORDERING INFORMATION PART NUMBER NE434S01-T1 NE434S01-T1B SUPPLYING FORM Tape & reel 1000 pcs./reel Tape & reel 4000 pcs./reel MARKING E 4 3 0.65 TYP. 1.9 ± 0.2 1.6 1. 2. 3. 4. Source Drain Source Gate Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID Ptot Tch Tstg 4.0 –3.0 IDSS 300 125 –65 to +125 V V mA mW qC qC 0.125 ± 0.05 0.4 MAX. 4.0 ± 0.2 RECOMMENDED OPERATING CONDITION (TA = 25 °C) CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 2 15 MAX. 2.5 20 0 Unit V mA dBm Document No. P11344EJ3V0DS00 (3rd edition) Date Published October 1996 P Printed in Japan © 1.5 MAX. ABSOLUTE MAXIMUM RATINGS (TA = 25 qC) 2.0 ± 0.2 0.5 TYP. 2 E 1996 NE434S01 ELECTRO-OPTICAL CHARACTERISTICS (TA = 25 qC) PARAMETER Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure.


2005-05-12 : NTE5586    NTE5587    NTE5588    NTE5589    NTE5590    NTE5591    NTE5592    NTE5593    NTE5597    NTE56   


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