NE425S01

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE425S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. PACKAGE DIMENSIONS (Unit: mm) 2.0 ±0.2 FEATURES Super Low Noise Figure & High Associated Gain NF = 0.60 dB TYP., Ga = 12.0 dB TYP. at f = 12 GHz Gate Length : Lg ≤ 0.20 µm Gate Width : Wg = 200 µm 2. 1 0 ±0 .2 0.5 TYP. ORDERING INFORMATION PART NUMBER NE425S01-T1 NE425S01-T1B SUPPLYING FORM Tape & reel 1000 pcs./reel Tape & reel 4000 pcs./reel MARKING G G 3 0.65 TYP. 1.9 ±0.2 1.6 4 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID IG Ptot Tch Tstg 4.0 –3.0 IDSS 100 165 125 –65 to +125 V V mA 1. 2. 3. 4. Source Drain Source Gate µA mW ˚C ˚C 0.125 ±0.05 0.4MAX 4.0 ±0.2 RECOMMENDED OPERATING CONDITION (TA = 25 ˚C) CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 2 10 MAX. 3 20 0 Unit V mA dBm Document No. P11161EJ3V0DS00 (3rd edition) Date Published October 1996 N Printed in Japan © 1.5 MAX 2.0 ±0.2 2 1996 NE425S01 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Gate to Source Leak Current Saturated Drain Current Gate to Source C...