NE4210S01

Drop-In DISReplacement: CONTICE3512K2 NUED DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz Gate Length: Lg ≤ 0.20 µm Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number Marking NE4210S01-T1 L NE4210S01-T1B Supplying Form Tape & reel 1 kp/reel Tape & reel 4 kp/reel Remark To order evaluation samples, please contact your nearby sales office. (Part number for sample order: NE4210S01-A) ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS –3.0 V Drain Current Gate Current ID IDSS mA IG 100 µA Total Power Dissipation Ptot 165 mW Channel Temperature Tch 125 °C Storage Temperature Tstg –65 to +125 °C RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage VDS 1 2 3 V Drain Current ID 5 10 15 mA Input Power Pin – – 0 dBm Document No. P14232EJ2V0DS00 (2nd edition) Date Published November 1999 N CP(K) The mark shows major revised points. Drop-In DISReplacement: CONTICE3512K2 NUED ELECTRIC...