DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE33284A
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DE...
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE33284A
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for GPS, TVRO and another commercial systems.
L 1.78 ±0.2 1
PACKAGE DIMENSIONS (Unit: mm)
FEATURES
Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP., Ga = 15.0 dB TYP. at f = 4 GHz Gate Width: Wg = 280 µm
1.78 ±0.2
L
U
2 L 3 L 4
ORDERING INFORMATION
SUPPLYING FORM STICK Tape & reel
PART NUMBER NE33284A-SL NE33284A-T1 NE33284A-T1A
LEAD LENGTH
L = 1.0 ±0.2 mm
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source
Voltage Gate to Source
Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID Ptot Tch Tstg 4.0 –3.0 IDSS 165 150 –65 to +150 V mA mW ˚C ˚C
1. Source 2. Drain 3. Source 4. Gate
RECOMMENDED OPERATING CONDITION (TA = 25 ˚C)
CHARACTERISTIC Drain to Source
Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 2 10 MAX. 3 20 0 Unit V mA dBm
Document No. P10874EJ2V0DS00 (2nd edition) (Previous No. TD-2369) Date Published October 1995 P Printed in Japan
©
0.1
V
1.7 MAX.
L = 1.7 mm MIN.
0.5 TYP.
0.5 TYP.
1995
NE33284A
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff
Voltage Transconductance Noise Figure SYMBOL IGSO IDSS ...