NE32500

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications. FEATURES Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz Gate Length : Lg = 0.2 µm Gate Width : Wg = 200 µm ORDERING INFORMATION PART NUMBER NE32500 NE27200 Standard (Grade D) Special, specific (Grade C and B) QUALITY GRADE ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID Ptot* Tch Tstg 4.0 –3.0 IDSS 200 175 –65 to +175 V V mA mW °C °C * Chip mounted on a Alumina heatsink (size: 3 × 3 × 0.6t) ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Thermal Resistance Noise Figure Associated Gain SYMBOL IGSO IDSS VGS(off) gm Rth* NF Ga MIN. – 20 –0.2 45 – – 11.0 TYP. 0.5 60 –0.7 60 – 0.45 12.5 MAX. 10 90 –2.0 – 260 0.55 – UNIT TEST CONDITIONS VGS = –3 V VDS = 2 V, VGS = 0 V VDS = 2 V, ID = 100 µA VDS = 2 V, ID = 10 mA channel to case VDS = 2 V, ID = 10 mA, f = 12 GHz µA mA V mS ˚C/W...