NE3210S01

Drop-InDISReplacement:CONTICE3512K2NUED DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz Gate Length: Lg ≤ 0.20 µm Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number Supplying Form NE3210S01-T1 Tape & reel 1 000 pcs./reel NE3210S01-T1B Tape & reel 4 000 pcs./reel Marking K Remark For sample order, please contact your nearby sales office. (Part number for sample order: NE3210S01-A) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Symbol Drain to Source Voltage VDS Gate to Source Voltage VGS Drain Current ID Gate Current IG Total Power Dissipation Ptot Channel Temperature Tch Storage Temperature Tstg Ratings 4.0 –3.0 IDSS 100 165 125 –65 to +125 Unit V V mA µA mW °C °C RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Characteristics Symbol MIN. TYP. Drain to Source Voltage VDS 1 2 Drain Current ID 5 10 Input Power Pin – – MAX. 3 15 0 Unit V mA dBm Document No. P14067EJ2V0DS00 (2nd edition) Date Published November 1999 N CP(K) The mark shows major revised points. Drop-InDISReplacement:CONTICE3512K2NUED ELECTRICAL CHARACTERISTICS (...