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NE27200 Datasheet

Part Number NE27200
Manufacturers NEC
Logo NEC
Description C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
Datasheet NE27200 DatasheetNE27200 Datasheet (PDF)

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.45 dB.

  NE27200   NE27200






C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz • Gate Length : Lg = 0.2 µm • Gate Width : Wg = 200 µm ORDERING INFORMATION PART NUMBER NE32500 NE27200 Standard (Grade D) Special, specific (Grade C and B) QUALITY GRADE ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID Ptot* Tch Tstg 4.0 –3.0 IDSS 200 175 –65 to +175 V V mA mW °C °C * Chip mounted on a Alumina heatsink (size: 3 × 3 × 0.6t) ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Thermal Resistance Noise Figure Associated Gain SYMBOL IGSO IDSS VGS(off) gm Rth* NF Ga MIN. – 20 –0.2 45 – – 11.0 TYP. 0.5 60 –0.7 60 – 0.45 12.5 MAX. 10 90 –2.0 – 260 0.55 – UNIT TEST CONDITIONS VGS = –3 V VDS = 2 V, VGS = 0 V VDS = 2 V, ID = 100 µA VDS = 2 V, ID = 10 mA channel to case VDS = 2 V, ID = 10 mA, f = 12 GHz µA mA V mS ˚C/W.


2005-05-12 : NTE5586    NTE5587    NTE5588    NTE5589    NTE5590    NTE5591    NTE5592    NTE5593    NTE5597    NTE56   


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