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NE25118

Part Number	NE25118
Manufacturer	NEC
Description	GENERAL PURPOSE DUAL-GATE GaAS MESFET
Published	May 12, 2005
Detailed Description	GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER • LOW CRSS: 0.02 pF (TYP)...
Datasheet	NE25118 PDF File

Overview

GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER • LOW CRSS: 0.
02 pF (TYP) • HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz • LOW NF: 1.
1 dB TYP AT 900 MHz • LG1 = 1.
0 µm, LG2 = 1.
5 µm, WG = 400 µm • ION IMPLANTATION • AVAILABLE IN TAPE & REEL OR BULK • LOW PACKAGE HEIGHT: 1.
0 mm MAX Power Gain, GPS (dB) 20 NE25118 POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE GPS 10 VG2S = 1 V VG2S = 0.
5 V VG2S = 2 V 10 ID = 10 mA f = 900 MHz 5 NF 0 0 0 5 10 DESCRIPTION The NE25118 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier.
As an example, by shorting the second gate to the...

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