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NDT2955 Datasheet

Part Number NDT2955
Manufacturers Fairchild
Logo Fairchild
Description P-Channel MOSFET
Datasheet NDT2955 DatasheetNDT2955 Datasheet (PDF)

September 1996 NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor cont.

  NDT2955   NDT2955






P-Channel MOSFET

September 1996 NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control. Features -2.5A, -60V. RDS(ON) = 0.3Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _______________________________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation T A = 25°C unless otherwise noted NDT2955 -60 ±20 (Note 1a) Units V V A -2.5 -15 (Note 1a) (Note 1b) (Note 1c) 3 1.3 1.1 -65 to 150 W TJ,TSTG Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 42 12 °C/W °C/W * Order option J23Z for cropped center drain lead. © 1997 Fairchild Semiconductor Corporation NDT2955 Rev. B2 Electrical Characteristics (TA = 25°C unless otherwise noted) .


2005-05-12 : NTE5586    NTE5587    NTE5588    NTE5589    NTE5590    NTE5591    NTE5592    NTE5593    NTE5597    NTE56   


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