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NDS9947 Datasheet

Part Number NDS9947
Manufacturers Fairchild
Logo Fairchild
Description Dual P-Channel MOSFET
Datasheet NDS9947 DatasheetNDS9947 Datasheet (PDF)

February 1996 NDS9947 Dual P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage ap.

  NDS9947   NDS9947






Part Number NDS9948
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description 60V Dual P-Channel MOSFET
Datasheet NDS9947 DatasheetNDS9948 Datasheet (PDF)

NDS9948 NDS9948 Dual 60V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Applications • Power management • Load switch • Battery protection Features • –2.3 A, –60 V RDS(ON) = 250 mΩ @ VGS = –10 V RDS(ON) = 500 mΩ @ VGS = –4.5 V • Low gate charge (9nC typical) • Fast sw.

  NDS9947   NDS9947







Part Number NDS9948
Manufacturers Fairchild
Logo Fairchild
Description Dual P-Channel MOSFET
Datasheet NDS9947 DatasheetNDS9948 Datasheet (PDF)

February 1996 NDS9948 Dual P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low volta.

  NDS9947   NDS9947







Part Number NDS9945
Manufacturers Fairchild
Logo Fairchild
Description Dual N-Channel MOSFET
Datasheet NDS9947 DatasheetNDS9945 Datasheet (PDF)

May 1998 NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where f.

  NDS9947   NDS9947







Dual P-Channel MOSFET

February 1996 NDS9947 Dual P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features -3.5A, -20V. RDS(ON) = 0.1Ω @ VGS = 10V High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ________________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current T A = 25°C unless otherwise noted NDS9947 -20 ± 20 TA = 25°C TA = 25°C (Note 1a) (Note 1a) Units V V A - Continuous ± 3.5 ± 2.5 ± 10 2 - Continuous TA = 70°C - Pulsed PD Power Dissipation for Dual Operation Power Dissipation for Single Operation W (Note 1a) (Note 1b) (Note 1c) 1.6 1 0.9 -55 to 150 °C TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS Rθ.


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