NDS8425

NDS8425 January 2001 NDS8425 Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint package. Applications DC/DC converter Load switch Features 7.4 A, 20 V. RDS(ON) = 0.022 Ω @ VGS = 4.5 V RDS(ON) = 0.028 Ω @ VGS = 2.7 V Fast switching speed Low gate charge (11nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package D D D D SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Cont...