NDS0605
July 2002
NDS0605
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enha...
NDS0605
July 2002
NDS0605
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize onstate resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver current up to 1A. This product is particularly suited to low
voltage applications requiring a low current high side switch.
Features
−0.18A, −60V. RDS(ON) = 5 Ω @ VGS = −10 V
Voltage controlled p-channel small signal switch High density cell design for low RDS(ON)
High saturation current
DD
SOT-23
S G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS VGSS ID
Drain-Source
Voltage Gate-Source
Voltage Drain Current – Continuous
– Pulsed
(Note 1)
...