February 1997
NDH8504P Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
SuperSOT -8 P-Channe...
February 1997
NDH8504P Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low
voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
TM
Features
-2.7 A, -30 V. RDS(ON) = 0.07Ω @ VGS = -10 V RDS(ON) = 0.115 Ω @ VGS = -4.5 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.
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5
4 3 2
1
6
7 8
Absolute Maximum Ratings T A = 25°C unless otherwise noted
Symbol VDSS VGSS ID PD TJ,TSTG Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation Operating and Storage Temperature Range
(Note 1) (Note 1)
NDH8504P
-30 ±20 -2.7 -8 0.8 -55 to 150
Units V V A
W °C
THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1) (Note 1)
156 40
°C/W °C/W...