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NDB6060L
N-Channel MOSFET Transistor
Description
isc N-Channel
MOSFET
Transistor NDB6060L FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source
Voltage
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 20mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and ...
Inchange Semiconductor
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