● VDS = 150V,ID =20A RDS(ON) <75mΩ @ VGS=10V (Typ:62mΩ) RDS(ON) <80mΩ @ VGS=4.5V (Typ:68mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent p...