Part Number
|
N0600N |
Manufacturer
|
Renesas |
Description
|
MOS FIELD EFFECT TRANSISTOR |
Published
|
Sep 9, 2013 |
Datasheet
|
N0600N PDF File
|
Features
• Low on-state resistance ⎯ RDS(on)1 = 25 mΩ MAX.(VGS =10 V, ID = 15 A) ⎯ RDS(on)2 = 36 mΩ MAX.(VGS = 4.5 V, ID = 15 A)
• Low input capacitance ⎯ Ciss = 1380 pF TYP.(VDS = 10 V, VGS = 0 V)
Ordering Information
Part No.N0600N-S17-AY ∗1 Lead Plati...
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