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N04Q1618C2B

Part Number	N04Q1618C2B
Manufacturer	AMI SEMICONDUCTOR
Description	4Mb Ultra-Low Power Asynchronous CMOS SRAM
Published	Aug 17, 2010
Detailed Description	AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX...
Datasheet	N04Q1618C2B PDF File

Overview

AMI Semiconductor, Inc.
ULP Memory Solutions 670 North McCarthy Blvd.
Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N04Q1618C2B Advance Information www.
DataSheet4U.
com 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY Overview The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology to provide ultra-low active and standby power.
The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for ...

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