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N-HFA15TB60

Ultrafast Soft Recovery Diode

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SEMICONDUCTOR

N-HFA15TB60 RRooHHSS

Nell High Power Products

FRED Ultrafast Soft Recovery Diode, 15 A

FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low I RRM Very low Q rr Specified at operating conditions
Lead (Pb)-free
Designed and qualified for industrial level
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
DESCRIPTION
HFA15TB60 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600V and 15 A continuous current, the HFA15TB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the FRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The FRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These FRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The FRED HFA15TB60 is ideally suited for applications in power supplies and conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.

cathode 2
13 Cathode Anode
TO-220AC
PRODUCT SUMMARY
VR VF at 15A at 25 °C
IF(AV) trr (typical) TJ (maximum)
Qrr dI(rec)M/dt

Available
RoHS*
COMPLIANT
600 V 1.7 V 15 A 19 ns 150 °C 84 nC 188 A/μs

ABSOLUTE MAXIMUM RATINGS
PARAMETER Cathode to anode voltage Maximum continuous forward current Single pulse forward current Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range

SYMBOL VR IF IFSM IFRM
PD
TJ, TStg

TEST CONDITIONS TC= 100 ºC
TC= 25 ºC TC = 100 ºC

VALUES 600 15 150 60 74 29
- 55 to 150

UNITS V A
W ºC

www.nellsemi.com

Page 1 of 6

SEMICONDUCTOR

N-HFA15TB60 RRooHHSS
Nell High Power Products

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

Cathode to anode breakdown voltage

VBR

Maximum forward voltage

VFM

Maximum reverse leakage current
Junction capacitance Series inductance

IRM
CT LS

(TJ = 25 ºC unless otherwise specified)

TEST CONDITIONS

MIN.

IR = 100 µA


























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