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MX28F2000T Datasheet

Part Number MX28F2000T
Manufacturers Macronix International
Logo Macronix International
Description 2M-BIT [256K x 8] CMOS FLASH MEMORY
Datasheet MX28F2000T DatasheetMX28F2000T Datasheet (PDF)

MX28F2000T 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • 262,144 bytes by 8-bit organization • Fast access time: 90/120 ns • Low power consumption – 50mA maximum active current – 100uA maximum standby current • Programming and erasing voltage 12V ± 5% • Command register architecture – Byte Programming (15us typical) – Auto chip erase 5 seconds typical (including preprogramming time) – Block Erase • Optimized high density blocked architecture – Eight 4-KB blocks – Fourteen 16-KB blocks • Auto Er.

  MX28F2000T   MX28F2000T






Part Number MX28F2000P
Manufacturers Macronix International
Logo Macronix International
Description 2M-BIT [256K x 8] CMOS FLASH MEMORY
Datasheet MX28F2000T DatasheetMX28F2000P Datasheet (PDF)

MX28F2000P 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • 262,144 bytes by 8-bit organization • Fast access time: 70/90/120 ns • Low power consumption – 50mA maximum active current – 100uA maximum standby current • Programming and erasing voltage 12V ± 5% • Command register architecture – Byte Programming (15us typical) – Auto chip erase 5 seconds typical (including preprogramming time) – Block Erase • Optimized high density blocked architecture – Four 4-KB blocks (Top) – Fourteen 16-KB blocks –.

  MX28F2000T   MX28F2000T







2M-BIT [256K x 8] CMOS FLASH MEMORY

MX28F2000T 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • 262,144 bytes by 8-bit organization • Fast access time: 90/120 ns • Low power consumption – 50mA maximum active current – 100uA maximum standby current • Programming and erasing voltage 12V ± 5% • Command register architecture – Byte Programming (15us typical) – Auto chip erase 5 seconds typical (including preprogramming time) – Block Erase • Optimized high density blocked architecture – Eight 4-KB blocks – Fourteen 16-KB blocks • Auto Erase (chip & block) and Auto Program – DATA polling – Toggle bit • 10,000 minimum erase/program cycles • Latch-up protected to 100mA from -1 to VCC+1V • Advanced CMOS Flash memory technology • Compatible with JEDEC-standard byte-wide 32-pin EPROM pinouts • Package type: – 32-pin plastic DIP – 32-pin PLCC GENERAL DESCRIPTION The MX28F2000T is a 2-mega bit Flash memory organized as 256K bytes of 8 bits each. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX28F2000T is packaged in 32-pin PDIP and PLCC . It is designed to be reprogrammed and erased insystem or in-standard EPROM programmers. The standard MX28F2000T offers access times as fast as 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX28F2000T has separate chip enable (CE) and output enable (OE) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programmin.


2006-01-06 : 2SK0065    2SK65    2SK0665    2SK665    2SK0664    2SK664    2SK0663    2SK663    2SK0662    2SK662   


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