MX0912B351Y

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES Interdigitated structure; high emitter efficiency Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Gold metallization realizes very stable characteristics and excellent lifetime Multicell geometry gives good balance of dissipated power and low thermal resistance Input and output matching cell allows an easier design of circuits. APPLICATIONS Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN application. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration and specified in class C. 3 2 Top view olumns MX0912B351Y PINNING - SOT439A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION 1 c b 3 e MAM045 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C broadband amplifier. MODE OF OPERATION Class C tp = 10 µs; δ = 10% f (GHz) 0.960 to 1.215 VCC (V) 50 PL (W) >325 Gpo (dB) >7 ηC (%) >40 Zi/ZL (Ω) see Figs 7 and 8 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product...