MX0912B100

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors FEATURES Interdigitated structure provides high emitter efficiency Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Gold metallization realizes very stable characteristics and excellent lifetime Multicell geometry improves power sharing and low thermal resistance Input and output matching cell allows an easier design of circuits. APPLICATIONS Common base class-C broadband pulse power amplifiers operating at 960 to 1215 MHz for TACAN application. DESCRIPTION NPN silicon planar epitaxial microwave power transistors. The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells. It is recommended for new designs. The MZ0912B100Y has a SOT443A metal ceramic flange package with the base connected to the flange. It is mounted in common base configuration and specified in class C. olumns MX0912B100Y; MZ0912B100Y PINNING PIN 1 2 3 collector emitter base connected to flange DESCRIPTION 1 c b 3 2 Top view 3 e MAM045 Fig.1 Simplified outline and symbol (SOT439A). handbook, halfpage 1 c b 3 e 2 Top view MAM314 Fig.2 Simplified outline and symbol (SOT443A). QUICK REFERENCE DATA Microwave performance at Tmb ≤ 25 °C in a common base class-C broadband ...