Freescale Semiconductor Technical Data
RF LDMOS Wideband Integrated Power Amplifiers
The MW7IC2240N wideband integrated ...
Freescale Semiconductor Technical Data
RF LDMOS Wideband Integrated Power
Amplifiers
The MW7IC2240N wideband integrated circuit is designed with on--chip matching that makes it usable from 2000 to 2200 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD--SCDMA.
Typical Performance
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 420 mA, Pout = 4 Watts Avg., f = 2112.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz. PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 30 dB Power Added Efficiency — 14% ACPR @ 5 MHz Offset — --50 dBc in 3.84 MHz Bandwidth
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 40 Watts CW Output Power
Pout @ 1 dB Compression Point ≃ 40 Watts CW Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 10 Watts
CW Pout. Features
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source Scattering Parameters
On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) Integrated Quiescent Current Temperature Compensation with Enable/
Disable Function (1) Integrated ESD Protection 225°C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
Document Number: MW7IC2240N Rev. 1, 6/2011
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
2110--2170 MHz, 4 W Avg., 28 V SINGLE W--CDMA
RF LDMOS WIDEBAND INTEGRATED POWER A...
