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MVB50P03HDLT4G

Part Number	MVB50P03HDLT4G
Manufacturer	ON Semiconductor
Description	P-Channel Power MOSFET
Features	• Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode ...
Published	Jan 28, 2016
Datasheet	MVB50P03HDLT4G PDF File

Features

• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured...

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