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MUN5135DW1T1 Datasheet

Part Number MUN5135DW1T1
Manufacturers ETL
Logo ETL
Description (MUN5111DW1T1 Series) Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors
Datasheet MUN5135DW1T1 DatasheetMUN5135DW1T1 Datasheet (PDF)

Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 se.

  MUN5135DW1T1   MUN5135DW1T1






Part Number MUN5135DW1T1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description (MUN5111DW1T1 Series) Dual Bias Resistor Transistors
Datasheet MUN5135DW1T1 DatasheetMUN5135DW1T1 Datasheet (PDF)

MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into .

  MUN5135DW1T1   MUN5135DW1T1







Part Number MUN5135DW1T1
Manufacturers Motorola
Logo Motorola
Description (MUN5111DW1T1 Series) Dual Bias Resistor Transistors
Datasheet MUN5135DW1T1 DatasheetMUN5135DW1T1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MUN5111DW1T1/D Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individ.

  MUN5135DW1T1   MUN5135DW1T1







Part Number MUN5135DW1T1
Manufacturers LRC
Logo LRC
Description (MUN5111DW1T1 Series) Dual Bias Resistor Transistors
Datasheet MUN5135DW1T1 DatasheetMUN5135DW1T1 Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single de.

  MUN5135DW1T1   MUN5135DW1T1







(MUN5111DW1T1 Series) Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors

Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices are housed in the SOT–363 package which is ideal for low–power surface mount applications where board space is at a premium. . Simplifies Circuit Design . Reduces Board Space . Reduces Component Count . Available in 8 mm, 7 inch/3000 Unit Tape and Reel MUN5111DW1T1 Series 6 5 4 1 2 3 SOT-363 CASE 419B STYLE1 6 5 4 MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Rating Symbol Value Unit Collector-Base Voltage V CBO –50 Vdc Collector-Emitter Voltage V CEO –50 Vdc www.DataSheet4U.com Collector Current IC –100 mAdc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation PD 187 (Note 1.) mW 256 (Note 2.) T A = 25°C 1.5 (Note 1.) mW/°C Derate above 25°C 2.0 (Note 2.) Thermal Resistance – Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation T A = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead Junction and .


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