MUN5135DW1

MUN5135DW1, NSBA123JDXV6, NSBA123JDP6 Dual PNP Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable Simplifies Circuit Design Reduces Board Space Reduces Component Count NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C, common for Q1 and Q2, unless otherwise noted) Rating Symbol Max Unit Collector−Base Voltage VCBO 50 Vdc Collector−Emitter Voltage VCEO 50 Vdc Collector Current − Continuous IC 100 mAdc Input Forward Voltage VIN(fwd) 12 Vdc Input Reverse Voltage VIN(rev) 5 Vdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality sh...