MUN5112DW

MUN5111DW Series Dual Bias Resistor Transistor PNP Silicon 3 2 1 6 5 4 1 4 5 6 2 3 SOT-363(SC-88) PNP+PNP M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO VCBO IC Value -50 -50 -100 Unit Vdc Vdc mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient (1) Junction and Storage, Temperature Range www.DataSheet4U.com Symbol PD R θJA TJ,Tstg Max 187 1.5 670 -55 to +150 Unit mW mW/ C C/W C 1.FR-4 @ minimum pad 2.FR-4 @ 1.0 l 1.0 inch Pad l Device Marking and Resistor Values Device MUN5111 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 Marking 0A 0B 0C 0D 0E 0F 0G R1(K) 10 22 47 10 10 4.7 1.0 R2(K) 10 22 47 47 8 8 Device MUN5131 MUN5132 MUN5133 MUN5134 MUN5135 MUN5136 MUN5137 Marking 0H 0J 0K 0L 0M 0N 0P R1(K) 2.2 4.7 4.7 22 2.2 100 47 R2(K) 2.2 4.7 47 47 47 100 22 1.0 WE ITR O N http://www.weitron.com.tw MUN5111DW Series Electrical Characteristics (TA=25 C Unless Otherwise noted) WE IT R ON Symbol Min Typ Max Unit Characteristics Off Characteristics Collector-Emitter Breakdown Voltage (IC=-2.0mA, IB =0) Collector-Base Breakdown Voltage (IC=-10 uA ,IE=0) Collector-Base Cutoff Voltage (VCB=-50 V, IE =0) Collector-Emitter Cutoff Current (ICE=-50V, IB =0) Emitter-Base Cutoff Current (VEB=-6.0V, IC =0) V(BR)CEO V(BR)CBO ICBO ICEO MUN5111DW MUN5112DW MUN5113DW MUN5114D...