MUN5111DW1T1 Series
Preferred Devices
Dual Bias Resistor Transistors
PNP Silicon Surface Mount Transistors with Monolit...
MUN5111DW1T1 Series
Preferred Devices
Dual Bias Resistor Transistors
PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices are housed in the SOT−363 package which is ideal for low−power surface mount applications where board space is at a premium.
Features http://onsemi.com
(3) R1 Q1 Q2 R2 (4) R1 (5) (6) (2) R2 (1)
Simplifies Circuit Design Reduces Board Space Reduces Component Count Pb−Free Packages are Available
1
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2) Rating Collector-Base
Voltage Collector-Emitter
Voltage Collector Current Symbol VCBO VCEO IC Value Unit SOT−363 CASE 419B STYLE 1
www.DataSheet4U.com −50 Vdc
−50 −100
Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead Junction and Storage Temperature Range Symbol PD Max ...
