MUN2137

MUN2111 Series Bias Resistor Transistor PNP Silicon COLLECTOR 3 1 BASE R1 R2 3 2 1 2 EMITTER SC-59 Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO VCBO IC Value 50 50 100 Unit Vdc Vdc mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1) (1)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient (1) Junction and Storage, Temperature Range 1.FR-4 @ minimum pad Symbol www.DataSheet4U.com Max 230 1.8 Unit mW mW/ C C/W C PD R θJA TJ,Tstg 540 -55 to +150 Device Marking and Resistor Values Device MUN2111 MUN2112 MUN2113 MUN2114 MUN2115 MUN2116 MUN2130 Marking 6A 6B 6C 6D 6E 6F 6G R1(K) 10 22 47 10 10 4.7 1.0 R2(K) 10 22 47 47 8 8 Device MUN2131 MUN2132 MUN2133 MUN2134 MUN2136 MUN2137 MUN2140 Marking 6H 6J 6K 6L 6N 6P 6T R1(K) 2.2 4.7 4.7 22 100 47 47 R2(K) 2.2 4.7 47 47 100 22 8 1.0 WE ITR O N http://www.weitron.com.tw MUN2111 Series Electrical Characteristics (TA=25 C Unless Otherwise noted) WE IT R ON Symbol Min Typ Max Unit Characteristics Off Characteristics Collector-Emitter Breakdown Voltage (2) (IC=2.0mA, IB =0) Collector-Base Breakdown Voltage (IC=10 uA ,IE=0) Collector-Base Cutoff Voltage (VCB=50 V, I E =0) Collector-Emitter Cutoff Current (VCE=50V, IB =0) Emitter-Base Cutoff Current (VEB=6.0V, IC =0) V(BR)CEO V(BR)CBO ICBO ICEO MUN2111 MUN2112 MUN2113 MUN2114 MUN2115 MUN2116 MUN2130 MUN2131 MUN2132 MUN2133 ...