TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTW8N60E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole
Designer's
MTW8N60E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This high voltageMOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capabili...
