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MTP4N40E

Part Number	MTP4N40E
Manufacturer	Motorola
Description	TMOS POWER FET 4.0 AMPERES 400 VOLTS
Published	Jan 27, 2006
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mo...
Datasheet	MTP4N40E PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .
™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time.
In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and comm...

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