CYStech Electronics Corp.
Spec. No. : C409E3 Issued Date : 2011.12.20 Revised Date : Page No. : 1/9
N-Channel Enhancem...
CYStech Electronics Corp.
Spec. No. : C409E3 Issued Date : 2011.12.20 Revised Date : Page No. : 1/9
N-Channel Enhancement Mode Power
MOSFET
MTN7N60E3
BVDSS : 600V RDS(ON) : 1.08Ω(typ.)
ID : 7A
Description
The MTN7N60E3 is a N-channel enhancement-mode
MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package
Applications
Switching Mode Power Supply LCD Panel Power Adapter E-bike Charger
Symbol
MTN7N60E3
Outline
TO-220
G：Gate D：Drain S：Source
MTN7N60E3
GDS
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C409E3 Issued Date : 2011.12.20 Revised Date : Page No. : 2/9
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10 seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temp...
